- Fabricant :
- Mounting Style :
- Package / Case :
- Filtrado seleccionado :
4 Productos
Imagen | Modelo | Precio | Cantidad | Existencias | Fabricant | Descripción | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Obtener una oferta |
3,200
Tenemos efectivo.
|
Infineon / IR | IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB... | SMD/SMT | D-PAK-3 | + 150 C | Tube | 60 W | Single | 1.2 kV | 3.17 V | 11 A | +/- 20 V | |||
|
Obtener una oferta |
245
Tenemos efectivo.
|
Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-247-3 | Tube | 60 W | Single | 1.2 kV | 3.17 V | 11 A | +/- 20 V | ||||
|
Obtener una oferta |
450
Tenemos efectivo.
|
Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-262-3 | Tube | 60 W | Single | 1.2 kV | 3.17 V | 11 A | +/- 20 V | ||||
|
Obtener una oferta |
112
Tenemos efectivo.
|
Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-247-3 | Tube | 60 W | Single | 1.2 kV | 3.17 V | 11 A | +/- 20 V |
1 / 1 Página